2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

04: Power / High-speed Devices and Materials

[J-6] Interface Technologies

2022年9月28日(水) 13:30 〜 15:45 303 (3F)

Session Chair: Yuichi Onozawa (Fuji Electric Corp.), Shinsuke Harada (AIST)

14:15 〜 14:30

[J-6-04] High Quality Al2O3/SiC Gate Stack Fabricated by Microwave Plasma Annealing

〇Nannan You1,2, Xinyu Liu1,2, Qian Zhang1,2, Jiayi Wang1, Yang Xu1, Yu Wang1,2, Shengkai Wang1,2 (1. Inst. of Beijing (China), 2. Univ. of Beijing (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-6-04

The post deposition microwave plasma annealing (MPA) is developed to obtain high quality Al2O3/SiC gate stacks. By optimizing the plasma power, the in-terface state density is reduced by 1 order of magni-tude to 6 × 1011 cm-2eV-1, the breakdown electric field is increased, and the voltage shift is effectively sup-pressed. XPS results show the oxygen plasma enters the Al2O3 dielectric and fills the incomplete lattice during the MPA process, meanwhile, the interface has not been further oxidized.

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