Improvement of SiO<sub>2</sub>/4H-SiC MOS Interface Characteristics via a Concentration-Tunable Boron Incorporation Process

講演情報

Oral Presentation

04: Power / High-speed Devices and Materials

[J-6] Interface Technologies

2022年9月28日(水) 13:30 〜 15:45 303 (3F)

Session Chair: Yuichi Onozawa (Fuji Electric Corp.), Shinsuke Harada (AIST)

15:15 〜 15:30

〇Runze Wang¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1. The Univ. of Tokyo (Japan), 2. Mitsubishi Electric Corp. (Japan))

Presentation style: On-site (in-person)

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