Measurement of Heat Dissipation between SiC and Thermal Interface Material in Power Device Packaging Based on Optical-Interference Contactless Thermometry

Jiawen Yu

doi:https://doi.org/10.7567/SSDM.2023.N-2-03

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-2] SiC Processes and Characterizations

2023年9月6日(水) 16:00 〜 17:30 Room N (432, Bldg. 4)

Session Chairs: Shinsuke Harada (National Institute of Advanced Industrial Science and Technology), Tomoya Ono (Kobe Univ.)

16:45 〜 17:00

[N-2-03] Measurement of Heat Dissipation between SiC and Thermal Interface Material in Power Device Packaging Based on Optical-Interference Contactless Thermometry

^○Jiawen Yu¹, Ryunosuke Goto¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1. Hiroshima Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-03

Abstract password authentication.
A password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

講演情報

[N-2] SiC Processes and Characterizations

[N-2-03] Measurement of Heat Dissipation between SiC and Thermal Interface Material in Power Device Packaging Based on Optical-Interference Contactless Thermometry

パスワード