Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET

Qiao Chu

doi:https://doi.org/10.7567/SSDM.2023.N-5-03

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-5] SiC MOS interfaces

2023年9月8日(金) 09:00 〜 10:15 Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Tarou Nishiguchi (Sumitomo Electric Industries, Ltd.)

09:30 〜 09:45

[N-5-03] Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET

^○Qiao Chu¹, Masahiro Masunaga², Akio Shima², Koji Kita¹ (1. The University of Tokyo (Japan), 2. Hitachi, Ltd. R&D Group (Japan))

https://doi.org/10.7567/SSDM.2023.N-5-03

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講演情報

[N-5] SiC MOS interfaces

[N-5-03] Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET

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