2023 International Conference on Solid State Devices and Materials

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Oral Presentation

04: Power / High‐speed Devices and Materials

[N-5] SiC MOS interfaces

Fri. Sep 8, 2023 9:00 AM - 10:15 AM Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Tarou Nishiguchi (Sumitomo Electric Industries, Ltd.)

9:45 AM - 10:00 AM

[N-5-04] Theoretical Analysis of Electron Scattering by Step-Terrace Structures at SiC Metal-Oxide-Semiconductor Interface

○Keisuke Utsumi1, Hajime Tanaka1, Nobuya Mori1 (1. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-5-04

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