Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET

Qiao Chu

doi:https://doi.org/10.7567/SSDM.2023.N-5-03

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Oral Presentation

04: Power / High‐speed Devices and Materials

[N-5] SiC MOS interfaces

Fri. Sep 8, 2023 9:00 AM - 10:15 AM Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Tarou Nishiguchi (Sumitomo Electric Industries, Ltd.)

9:30 AM - 9:45 AM

[N-5-03] Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET

^○Qiao Chu¹, Masahiro Masunaga², Akio Shima², Koji Kita¹ (1. The University of Tokyo (Japan), 2. Hitachi, Ltd. R&D Group (Japan))

https://doi.org/10.7567/SSDM.2023.N-5-03

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Presentation information

[N-5] SiC MOS interfaces

[N-5-03] Anomalous Impact of Mechanical Uniaxial Stress on Threshold Voltage of 4H-SiC (0001) MOSFET

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