The Influence of Boron Concentration on the Reduction of SiO <sub>2</sub>/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability

Runze Wang

doi:https://doi.org/10.7567/SSDM.2023.N-5-05

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Oral Presentation

04: Power / High‐speed Devices and Materials

[N-5] SiC MOS interfaces

Fri. Sep 8, 2023 9:00 AM - 10:15 AM Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Tarou Nishiguchi (Sumitomo Electric Industries, Ltd.)

10:00 AM - 10:15 AM

[N-5-05] The Influence of Boron Concentration on the Reduction of SiO ₂/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability

^○Runze Wang¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1. Univ. of Tokyo (Japan), 2. Mitsubishi Electric Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.N-5-05

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Presentation information

[N-5] SiC MOS interfaces

[N-5-05] The Influence of Boron Concentration on the Reduction of SiO 2/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability

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[N-5-05] The Influence of Boron Concentration on the Reduction of SiO ₂/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability