5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS

Kiyoshi Kato

doi:https://doi.org/10.36463/idw.2021.0177

16:20 〜 16:40

[AMD6/AIS8-4L] 5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS

*Kiyoshi Kato¹、Hidetomo Kobayashi¹、Hideaki Shishido¹、Toshiyuki Isa¹、Tomoya Aoyama¹、Yasuhiro Jimbo¹、Ryota Hodo¹、Koji Kusunoki¹、Hajime Kimura¹、Hitoshi Kunitake¹、Shunpei Yamazaki¹ (1.Semiconductor Energy Laboratory Co., LTD. (Japan))

CAAC-IGZO, OLED, Ultra high definition

https://doi.org/10.36463/idw.2021.0177

For the first time in the world, we have fabricated OLED display that monolithically integrates Si CMOS, oxide semiconductor FETs, and OLED devices. The panel fabricated is a thin-bezel, > 5000 ppi OLED display with drivers embedded in the display area, enabling area savings of up to approximately 40%

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[AMD6/AIS8-4L] 5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS