International Display Workshops General Incorporated Association

[AMDp1-7] High-reliable Integrated Gate Driver GOA TFT development under Extremely High Intensity Illumination for Large-Size UHD LCDs Outdoor display applications

*An-Thung Cho1、Feng-yun Yang1、Hao Dong1、James Hsu1、Wade Chen1 (1.ChuZhou HKC Optoelectronics Technology Co., Ltd., China (China))

Amorphous silicon, High Intensity Illumination, Thin Film Transistor

https://doi.org/10.36463/idw.2022.0220

We report the unusual black mura reliability behavior in the a-Si TFT when biased under extremely high intensity illumination (> 400000 Cd/cm2). However, the black mura reliability issue is effectively improved by embedding the higher energy band gap (~4.83 eV) design of lower deposited rate N-rich SiNx in the gate insulator. This reliability behavior originated from the injection of electrons in gate electrode, transported and...