[B-2-2] Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers R. Hirano、E. Oomura、H. Higuchi、Y. Sakakibara、H. Namizaki、W. Susaki (1.LSI Research & Development Laboratory, Mitsubishi Electric Corp.) https://doi.org/10.7567/SSDM.1982.B-2-2