[B-6-3] Chemical Vapor Deposition and Characterization of Phosphorus-Nitride (P3N5) Gate Insulator for An Inversion-Mode InP MISFET
Yukihiro Hirota, Takeshi Kobayashi, Yoshitaka Furukawa
(1.Musashino Electrical Communication Laboratory, N.T.T.)
https://doi.org/10.7567/SSDM.1982.B-6-3