A New Self-Aligned Contact Technology for LDD MOS Transistors

A. Shinohara; M. Fukumoto; G. Fuse; S. Odanaka; M. Sasago; T. Ohzone; T. Ishihara

doi:https://doi.org/10.7567/SSDM.1985.A-1-4

1985 Conference on Solid State Devices and Materials

Aug 25, 1985 - Aug 27, 1985
Nippon Toshi Center, Tokyo, Japan

[A-1-4] A New Self-Aligned Contact Technology for LDD MOS Transistors

A. Shinohara, M. Fukumoto, G. Fuse, S. Odanaka, M. Sasago, T. Ohzone, T. Ishihara (1.Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.)

https://doi.org/10.7567/SSDM.1985.A-1-4

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