[B-6-2] Doping of Trench Capacitors for 4 Megabit DRAMs

H. Binder、H. Geiger、R. Kakoschke、H. M. Muhlhoff、S. Rohl (1.Siemens AG, Central Research and Development, Components Division)

https://doi.org/10.7567/SSDM.1986.B-6-2