[D-9-6] AlInAs/GaInAs HIFETs(Hetero-Interface FETs) grown by Normal pressure MOCVD Using Triethylmetals

M. Kamada、H. Ishikawa、M. Ikeda、Y. Mori、C. Kojima (1.Sony Corporation Research Center)

https://doi.org/10.7567/SSDM.1986.D-9-6