[A-2-3] 500V Lateral Double Gate Bipolar-Mode MOSFET(DGIGBT) Dielectrically Isolated by Silicon Wafer Direct-Bonding(DISDB)

Akio Nakagawa、Yoshihiro Yamaguchi、Kiminori Watanabe (1.Toshiba Corporation)

https://doi.org/10.7567/SSDM.1988.A-2-3