[P-0-1] High Temperature Superconductors and Its Application

Shoji Tanaka (1.Department of Physics Tokai University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[P-0-2] Imaging with the STM and the AFM

Calvin F. QUATE (1.Edward L. Ginzton Laboratory Stanford University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-1-1] Experimental Technology and Performance of 0.1μm Gate-Length Low Temperature Operation MOSFETs

G. A. Sai-Halasz (1.IBM Research Division, T. J. Watson Research Center)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] Fully Symmetrical Cooled-CMOS on (110) Plane

Masaaki Aoki, Kazuo Yano, Toshiaki Masuhara, Katsuhiro Shimohigashi (1.Central Research Laboratory, Hitachi Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] High Temperature Operated Enhancement-Type β-SiC MOSFET

Hiroo Fuma, Atsushi Miura, Hiroshi Tadano, Susumu Sugiyama, Mitsuharu Takigawa (1.Toyota Central Res. & Dev. Labs., Inc.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] A New Device Structure Utilizing Atomic Layer Doping (ALD) Technology in Si Systems

Ken YAMAGUCHI, Kiyokazu NAKAGAWA, Yasuhiro SHIRAKI (1.Central Research Laboratory, Hitachi Ltd., 2.Research Center for Advanced Science and Technology University of Tokyo)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] A Complete Self-aligned-gate LID-MOS Technology

Hiroshi Inokawa, Toshio Kobayashi (1.NTT LSI Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] High Power Insulated Gate Bipolar Transistors (IGBTs)

H. Ohashi, A. Nakagawa, M. Hideshima (1.Toshiba R&D Center, 2.Toshiba Microelectronics Center)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] TILBW Bipolar Power Switching Transistor

Andrei SILARD, Gabriel NANI (1.Department of Electronics, Polytechnic Institute, 2.IPRS-Baneasa (Enterprise for Radio Components & Semiconductors))

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] 500V Lateral Double Gate Bipolar-Mode MOSFET(DGIGBT) Dielectrically Isolated by Silicon Wafer Direct-Bonding(DISDB)

Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe (1.Toshiba Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download