[A-2-4] 6000V Double Gate GTOs

Tsuneo OGURA, Akio NAKAGAWA, Katsuhiko TAKIGAMI, Masaki ATSUTA, Yoshio KAMEI (1.Research and Development Center, Toshiba Corp.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode FET Structure

P. G. Fallica, G. Ferla, A. Galluzzo, S. Musumeci, S. Bellone, G. Cocorullo (1.ST - Microelectronics, 2.University of Naples, 3.IRECE-CNR)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-3-1] Lateral Autodoping Suppression by Selective Epitaxy Capping and Its Application in High Speed BiCMOS

Tzu-Yin Chiu, Kwing F. Lee, Maureen Y. Lau, Sean N. Finegan, Mark D. Morris, Alexander M. Voshchenkov (1.AT&T Bell Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Very-Low-Temperature Epitaxial Silicon Growth by Low-Kinetic-Energy Particle Bombardment

Tadahiro Ohmi, Kiyohiko Matsudo, Tadashi Shibata Takeshi Ichikawa, Hiroshi Iwabuchi (1.Department of Electronics, Faculty of Engineering Tohoku University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] Low Temperature CVD Technique for Crystalline Si Deposition

T. Fujii, H. Araki, M. Ohkuni, Y. Tarui (1.Department of Electronic Engineering, Tokyo University of Agriculture & Technology, 2.VLSI Development Laboratories, Sharp Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] Novel Highly Conductive Polycrystalline Silicon Films Reducing Processing Temperature Down to 650℃

T. Kobayashi, S. Iijima, S. Aoki, A. Hiraiwa (1.Central Research Laboratory, Hitachi Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] Selective Growth of Polycrystalline Silicon by Laser-Induced Cryogenic CVD

Takeshi TANAKA, Koji DEGUCHI, Seiichi MIYAZAKI, Masataka HIROSE (1.Department of Electronics, Hiroshima Institute of Technology, 2.Department of Electrical Engineering, Hiroshima University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] Effects of Magnetic Fields and Excited Plasma Species on Silicon Oxide Film Formation by Microwave Plasma CVD

Takuya Fukuda, Kazuo Suzuki, Yasuhiro Mochizuki, Michio Ohue, Naohiro Momma, Tadashi Sonobe (1.Hitachi Research Laboratory and Hitachi Works, Hitachi Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Growth of SiO2 Thin Film by Photo-CVD Using 123nm VUV Light

Kohji INOUE, Masanori OKUYAMA, Yoshihiro HAMAKAWA (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

1988 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] Reaction Mechanisms with Synchrotron Radiation-Stimulated Etching of Si and SiO2

Jun-ichi Takahashi, Yuichi Utsumi, Tsuneo Urisu (1.NTT LSI Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download