[B-1-2] An Experimental Study of Hot Carrier Temperature in Submicron pMOSFETs

Kazuyuki Saito, Akira Yoshii (1.NTT LSI Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Experimental Evidence for Hole-Induced Interface State Generation under High Field Tunneling Current Stressing

Yoshio OZAWA, Masao IWASE, Akira TORIUMI (1.ULSI Research Center, Toshiba Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] A Reliable Profiled Lightly-Doped Drain(PLD) Cell for High Density Submicron EPROMS and Flash EEPROMS

Kuniyoshi YOSHIKAWA, Masaki SATO, Yoichi OHSHIMA (1.Semiconductor Device Engineering Laboratory, TOSHIBA Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[B-1-5] New Phenomena in MNOS Retention Characteristics and Their Application to Memory Device Design for Megabit EEPROM's

Sin-ichi Minami, Yoshiaki Kamigaki, Ken Uchida, Koichi Nagasawa, Kazunori Furusawa, Takeshi Furuno, Takaaki Hagiwara, Masaaki Terasawa (1.Central Research Laboratory, Hitachi Ltd., 2.Musashi Works, Hitachi Ltd., 3.Hitachi VLSI Engineering Corp.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[B-1-6] Inter-Poly SiO2/Si3N4 Capacitor Films 5nm Thick for Deep Submicron LSIs

J. Yugami, T. Mine, S. Iijima, A. Hiraiwa (1.CENTRAL RESEARCH LABORATORY, HITACHI, LTD.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[C-1-1] Effect of Annealing on the SOI Structure Formed by Large Dose Oxygen Implantation

Nan-Xiang Chen, Wei Miao, Zhong-Lie Wang, Chang Huang (1.Inst. of Low Energy Nuclear Physics, Beijing Normal University, 2.Shaanxi Eishan Micro-Electronics Institute)

1988 International Conference on Solid State Devices and Materials |PDF Download

[C-1-2] High Crystalline Quality Si Film Formation on Lattice-matched Mixed Oxide (SrxBa1-xO)/Si(111) Stacked Structure

Yuichi Kado, Yoshinobu Arita (1.NTT LSI Laboratory)

1988 International Conference on Solid State Devices and Materials |PDF Download

[C-1-3] Crystal Defect Study of Solid Phase Epitaxially Grown Si Surrounded by SiO2 Structures

Eiichi Murakami, Masao Tamura, Kikuo Kusukawa, Masahiro Moniwa, Terunori Warabisako, Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF Download

[C-1-4] Recrystallization Mechanism for Solid Phase Growth of Poly-Si Films on Quartz Substrates

Akira NAKAMURA, Fumiaki EMOTO, Eiji FUJII, Yasuhiro UEMOTO Atsuya YAMAMOTO, Kohji SENDA, Gota KANO (1.Electronics Research Laboratory Matsushita Electronics Corporation)

1988 International Conference on Solid State Devices and Materials |PDF Download

[C-1-5] Performance and Microstructural Analysis of 3D Circuits Fabricated in E-Beam Recrystallized SOI

Haroon AHMED, Richard A. McMAHON (1.Microelectronics Research Laboratory, Department of Physics, Cambridge University)

1988 International Conference on Solid State Devices and Materials |PDF Download