A Methodology for Control of Nucleation and Grain Growth in Amorphous Silicon Films and Its Application to Process Optimization for TFTs

I. Mizushima; S. Kambayashi; T. Yoshida; M. Kinugawa; K. Ohori; H. Kuwano; S. Onga; J. Matsunaga

doi:https://doi.org/10.7567/SSDM.1990.C-9-1

[C-9-1] A Methodology for Control of Nucleation and Grain Growth in Amorphous Silicon Films and Its Application to Process Optimization for TFTs

I. Mizushima, S. Kambayashi, T. Yoshida, M. Kinugawa, K. Ohori, H. Kuwano, S. Onga, J. Matsunaga (1.ULSI Research Center, Semiconductor Device Engineering Laboratory, Toshiba Corporation, 2.Keio University)

https://doi.org/10.7567/SSDM.1990.C-9-1

1990 International Conference on Solid State Devices and Materials

[C-9-1] A Methodology for Control of Nucleation and Grain Growth in Amorphous Silicon Films and Its Application to Process Optimization for TFTs