Sub 0.1μm nMOSFET Utilizing Narrow Trench Gate and Selective Excimer Laser Annealing (SELA)

Hironori Tsukamoto; Hiroshi Yamamoto; Michitaka Kubota; Thomas Boehm; Takashi Noguchi; Machio Yamagishi

doi:https://doi.org/10.7567/SSDM.1993.A-2-3

[A-2-3] Sub 0.1μm nMOSFET Utilizing Narrow Trench Gate and Selective Excimer Laser Annealing (SELA)

Hironori Tsukamoto、Hiroshi Yamamoto、Michitaka Kubota、Thomas Boehm、Takashi Noguchi、Machio Yamagishi (1.Advanced Device Division, ULSI Research and Development Laboratories, Sony Corporation、2.Semiconductors Department, Research Center, Sony Corporation)

https://doi.org/10.7567/SSDM.1993.A-2-3

1993 International Conference on Solid State Devices and Materials

[A-2-3] Sub 0.1μm nMOSFET Utilizing Narrow Trench Gate and Selective Excimer Laser Annealing (SELA)