Anomalous Resistance in 0.1μm-Region Ti-Silicided Poly Si Gate

Minoru Takahashi; Iwao Kunishima; Masao Iwase; Hiromi Niiyama Tomohisa Mizuno; Naoki Yasuda; Makoto Yoshimi

doi:https://doi.org/10.7567/SSDM.1993.PB-3-5

1993 International Conference on Solid State Devices and Materials

1993年8月29日〜 1993年9月1日
Makuhari Messe, Chiba, Japan

[PB-3-5] Anomalous Resistance in 0.1μm-Region Ti-Silicided Poly Si Gate

Minoru Takahashi、Iwao Kunishima、Masao Iwase、Hiromi Niiyama Tomohisa Mizuno、Naoki Yasuda、Makoto Yoshimi (1.ULSI Research Labs, R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1993.PB-3-5

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