Hot Carrier Effects in Sub-0.1 μm MOSFETs

F. Balestra; T. Matsumoto; T. Shimatani; M. Tsuno; H. Nakabayashi; M. Koyanagi

doi:https://doi.org/10.7567/SSDM.1994.A-10-3

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[A-10-3] Hot Carrier Effects in Sub-0.1 μm MOSFETs

F. Balestra、T. Matsumoto、T. Shimatani、M. Tsuno、H. Nakabayashi、M. Koyanagi (1.Faculty of Engineering, Tohoku University、2.Research Center for Integrated Systems, Hiroshima University)

https://doi.org/10.7567/SSDM.1994.A-10-3

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