Nanometer Scale MOSFETs and STM Patterning on Si

J. R. Tucker; C. Wang; J. W. Lyding; T.-C. Shen; G. C. Abeln

doi:https://doi.org/10.7567/SSDM.1994.S-III-5

1994 International Conference on Solid State Devices and Materials

1994年8月23日〜 1994年8月26日
Pacifico Yokohama, Yokohama, Japan

[S-III-5] Nanometer Scale MOSFETs and STM Patterning on Si

J. R. Tucker、C. Wang、J. W. Lyding、T.-C. Shen、G. C. Abeln (1.Department of Electrical and Computer Engineering and Beckman Institute University of Illinois)

https://doi.org/10.7567/SSDM.1994.S-III-5

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