InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling

Atsushi Tackeuchi; Yoshiaki Nakata; Shunichi Muto; Tsuguo Inata; Tatsuya Usuki; Yoshihiro Sugiyama; Naoki Yokoyama; Osamu Wada

doi:https://doi.org/10.7567/SSDM.1995.S-VI-2-1

[S-VI-2-1] InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling

Atsushi Tackeuchi, Yoshiaki Nakata, Shunichi Muto, Tsuguo Inata, Tatsuya Usuki, Yoshihiro Sugiyama, Naoki Yokoyama, Osamu Wada (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1995.S-VI-2-1

1995 International Conference on Solid State Devices and Materials

[S-VI-2-1] InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling