[A-0-1] Four-Terminal Device Electronics for Intelligent Silicon Integrated Systems

Tadahiro OHMI, Tadashi SHIBATA (1.Department of Electronic Engineering, Tohoku University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[A-0-2] The Control of Optical Beams in Imaging and High Data Rate Fiber Communications

A. Yariv (1.California Inst.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[A-0-3] 300mm Implementation

Frank Robertson (1.SEMATECH)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-1] The Role of Thermodynamics in Determining the Short Range Order in Amorphous Insulating Films

F. W. SMITH (1.Physics Department, City College of the City University of New York)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-2] In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces

Hiroki OGAWA, Kenji ISHIKAWA, Masaru AOKI, Shuzo FUJIMURA, Nobuo UENO, Yasuhiro HORIIKE, Yoshiya HARADA (1.Process Development Div., C850, Fujitsu Ltd., 2.Department of Chemistry, College of Arts and Science, The Univ. of Tokyo, 3.Department of Material Science, Faculty of Engineering, Chiba Univ., 4.Department of Electrical Engineering, Toyo Univ.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-3] Study on Oxidation of Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy

Hiroshi IKEGAMI, Kenji OHMORI, Hiroya IKEDA, Hirotaka IWANO, Shigeaki ZAIMA, Yukio YASUDA (1.Department of Crystalline Materials Science, School of Engineering, Nagoya University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-4] Interface States at Ultrathin Chemical Oxide/Silicon Interfaces Obtained from Measurements of XPS Spectra under Biases

Hikaru Kobayashi, Yoshiyuki Yamashita, Kenji Namba, Yoshihiro Nakato, Yasushiro Nishioka (1.Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of Organic Materials, Osaka University, 2.Tsukuba Research and Development Center, Texas Instruments Japan)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-1-5] Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure

Junji KOGA, Shin-ichi TAKAGI, Akira TORIUMI (1.ULSI Research Laboratories, Toshiba Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-2-1] Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method

Takeshi KANASHIMA, Masanori OKUYAMA, Yoshihiro HAMAKAWA (1.Department of Electrical Engineering, Faculty of Engineering Science Osaka University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-2-2] The Valence Band Alignment at Ultra-Thin SiO2/Si(100) Interfaces Determined by High-Resolution X-Ray Photoelectron Spectroscopy

J. L. Alay, M. Fukuda, K. Nakagawa, S. Yokoyama, M. Hirose (1.Research Center for Integrated Systems, Hiroshima University, 2.Department of Electrical Engineering, Hiroshima University)

1995 International Conference on Solid State Devices and Materials |PDF Download