A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement

S. M. Cheng; Steve S. Chung; M. S. Liang

doi:https://doi.org/10.7567/SSDM.1996.A-1-4

[A-1-4] A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement

S. M. Cheng、Steve S. Chung、M. S. Liang (1.Department of Electronic Engineering, National Chiao Tung University、2.Taiwan Semiconductor Manufacturing Co.)

https://doi.org/10.7567/SSDM.1996.A-1-4

1996 International Conference on Solid State Devices and Materials

[A-1-4] A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement