[A-0-1] Future CMOS Scaling-Approaching the Limits?

Robert H. Dennard (1.IBM T. J. Watson Research Center)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-0-2] An Attempt for Industrial-Academic-Governmental Joint Research in the Basic Studies of Device, Material and Process -- Research on Ultimate Manipulation of Atoms and Molecules at the National Institute for Advanced Interdisciplinary Research --

Yasuharu SUEMATSU (1.National Institute for Advanced Interdisciplinary Research, Agency of Industrial Science and Technology, Ministry of International Trade and Industry)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-1-1] Atomic-Scale and Hierarchical Modeling for Nano-Electronics

Robert W. Dutton, Edwin C. Kan, Shinji Onga, Takako Okada (1.Center for Integrated Systems, Stanford University, 2.ULSI Research Center, Toshiba)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] New Method of Extracting Inversion Layer Thickness and Charge Profile and Its Impact on Scaled MOSFETs

Tetsu TANAKA, Toshihiro SUGII, Chenming HU (1.Fujitsu laboratories LTD., 2.Department of Electrical Engineering and Computer Sciences, University of California at Berkeley)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices

Steve S. Chung, G. H. Lee, S. M. Cheng, M. S. Liang (1.Department of Electronic Engineering, National Chiao Tung University, 2.Taiwan Semiconductor Manufacturing Co.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement

S. M. Cheng, Steve S. Chung, M. S. Liang (1.Department of Electronic Engineering, National Chiao Tung University, 2.Taiwan Semiconductor Manufacturing Co.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] An Approach for Migrating to Low Voltage and Low Power ULSIs

Eiji Takeda (1.Technology Marketing Operation Semiconductor & IC Division, Hitachi Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Proposal of Pseudo Source and Drain MOSFETs and Evaluation for 10-nm Gate MOSFETs

H. Kawaura, T. Sakamoto, T. Baba, Y. Ochiai, J. Fujita, S. Matsui, J. Sone (1.Fundamental Research Laboratories, NEC Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Self-Aligned Control of Threshold Voltages in 0.1 μm nMOSFETs

H. Kurata, T. Sugii (1.Fujitsu Laboratories Ltd.)

1996 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Three-Terminal Silicon Esaki Tunneling Device

Junji KOGA, Akira TORIUMI (1.ULSI Research Laboratories, Toshiba Corporation)

1996 International Conference on Solid State Devices and Materials |PDF Download