[LPC-1] High Energy B Implantation for Fe Gettering; Evaluation of 7.5 nm Thick Gate Oxide Reliability

K. Hamada, D. J. Eaglesham, T. Hayashi, J. M. Poate, S. Saito (1.ULSI Device Dev. Labs., NEC Corp., 2.Lucent Technologies)

https://doi.org/10.7567/SSDM.1996.LPC-1