[AB-2-2] Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer

Yasuhiro DOHMAE、Satoshi SUZUKI、Tamotsu HASHIZUME、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[AB-2-3] Fabrication of p+ - Gate InAs-Channel HEMT Based on InP

Ryoji Koizumi、Yoshihisa Tabuchi、Kanji Yoh (1.Research Center for Interface Quantum Electronics, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-1] Carrier Transport in Nanoscale Structures

David K. FERRY、Richard AKIS、Sujeeth UDIPI、Dragica VASILESKA、David P. PIVIN, Jr.、Kevin M. CONNOLLY、Jonathon P. BIRD、Koji ISHIBASHI、Yoshinobu AOYAGI、Takuo SUGANO、Yuichi OCHIAI (1.Center for Solid State Electronics Research and Department of Electrical Engineering Arizona State University、2.Center for System Science and Engineering, Arizona State University、3.Frontier Research Program, RIKEN、4.Materials Research Department, Chiba University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-2] A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots

Takaya Nakano、Takayuki Nakagawa、Kanji Yoh (1.Research Center for Interface Quantum Electronics, Hokkaido University)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-3] Room Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Si Doping in Nonplanar Epitaxy

H. Ohnishi、M. Hirai、K. Fujita、T. Watanabe (1.ATR Optical and Radio Communications Research Laboratories)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-4] High Temperature Estimation of Phase Coherent Length of Hot Electron Using GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by OMVPE

Riichiro Takemura、Michihiko Suhara、Takashi Oobo、Yasuyuki Miyamoto、Kazuhito Furuya、Yuji Nakamura (1.Department of Electrical and Electric Engineering, Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-5] CdF2/CaF2 Resonant Tunneling Diode Fabricated on Si(111)

Akira Izumi、Noriyuki Matsubara、Yusuke Kushida、Kazuo Tsutsui、Nikolai S. Sokolov (1.School of Materials Science, JAIST (Japan Advanced Institute of Science and Technology)、2.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology、3.Ioffe Physico-Technical Institute, Russian Academy of Sciences)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] Dissipation Engineering in Quantum Devices

Jean-Pierre LEBURTON (1.Beckman Institute and Department of Electrical and Computer Engineering, and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign Urbana)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-2] Universal Dependence of Avalanche Breakdown on Bandstructure: Choosing Materials for High-Power Devices

Jeremy ALLAM (1.Hitachi Cambridge Laboratory Cavendish Laboratory)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-3] Charge Storage Effects in PHEMTs

Fritz Schuermeyer、Charles Cerny、Chris Bozada (1.Wright Laboratory, AADD, Wright Patterson AFB)

1996 International Conference on Solid State Devices and Materials |PDF ダウンロード