[A-1-3] Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate CMOS for 0.1 μm DRAM Technology

Yong-Hae Kim、Sung-Keun Chang、Seon-Soon Kim、Jun-Gi Choi、Sang-Hee Lee Dae-Hee Hahn、Hyung-Duck Kim (1.Semiconductor Advanced Research Division, Hyundai Electronics Industries)

https://doi.org/10.7567/SSDM.1999.A-1-3