[B-4-2] Sub 1.3nm Amorphous Ta2O5 Gate Dielectrics for Damascene Metal Gate Transistor

Seiji Inumiya、Atsushi Yagishita、Tomohiro Saito、Masaki Hotta、Yoshio Ozawa、Kyoichi Suguro、Yoshitaka Tsunashima、Tsunetoshi Arikado (1.Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1999.B-4-2