[A-7-2] Ultra Shallow Junction Formation for 80 nm CMOS by Controlling Transient Enhanced Diffusion

K. Ohuchi、K. Adachi、A. Murakoshi、A. Hokazono、T. Kanemura、N. Aoki、M. Nishigohri、K. Suguro、Y. Toyoshima (1.System LSI Research & Development Center, Toshiba Corporation Semiconductor Company、2.Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company、3.Advanced Logic Technology Department, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.2000.A-7-2