[B-1-8] A Novel T-Shaped Shallow Trench Isolation Technology Using Sidewall Spacer for 512Mbit Flash Memories and Beyond

S. H. Hong、D. H. Ahn、M. H. Park、T. K. Kim、H. K. Kang、J. T. Moon (1.Semiconductor R&D Center, Samsung Electronics Co., LTD)

https://doi.org/10.7567/SSDM.2000.B-1-8