[B-2-3] Comparison of Sub-Bandgap Impact Ionization in Deep-Sub-Micron Conventional and Lateral Asymmetrical Channel nMOSFETs

Anil K. G., S. Mahapatra, V. Ramgopal Rao, I. Eisele (1.Institute of Physics, Universitat der Bundeswehr Munich, 2.Department of Electrical Engineering, Indian Institute of Technology)

https://doi.org/10.7567/SSDM.2000.B-2-3