[B-2-3] Comparison of Sub-Bandgap Impact Ionization in Deep-Sub-Micron Conventional and Lateral Asymmetrical Channel nMOSFETs

Anil K. G.、S. Mahapatra、V. Ramgopal Rao、I. Eisele (1.Institute of Physics, Universitat der Bundeswehr Munich、2.Department of Electrical Engineering, Indian Institute of Technology)

https://doi.org/10.7567/SSDM.2000.B-2-3