[B-9-4] Novel Method of Threshold Voltage Control of Metal Gate CMOSFETs Using Channel Epitaxy

W. S. Kim, S. Song, Y. Khang, T. H. Choe, J. Y. Yoo, N. I. Lee, K. Fujihara, H. K. Kang, J. T. Moon (1.Semiconductor R&D Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2000.B-9-4