Analysis of Gate Disturb Degradation by Nitridation of Flash Tunnel Oxide

M. Arai; T. Hashidzume; T. Nitta; Y. Odake; I. Matsuo

doi:https://doi.org/10.7567/SSDM.2000.C-6-2

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[C-6-2] Analysis of Gate Disturb Degradation by Nitridation of Flash Tunnel Oxide

M. Arai、T. Hashidzume、T. Nitta、Y. Odake、I. Matsuo (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.2000.C-6-2

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