[C-8-1] A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

Tsutomu Tezuka, Naoharu Sugiyama, Tomohisa Mizuno, Masamichi Suzuki, Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 2.Environmental Engineering and Analysis Center, Corporate R&D center, Toshiba corporation)

https://doi.org/10.7567/SSDM.2000.C-8-1