Design of SiGe/Buried Oxide Layered Structure to Form Highly Strained Si Layer on Insulator for SOI MOSFETs

N. Sugiyama; T. Mizuno; M. Suzuki; S. Takagi

doi:https://doi.org/10.7567/SSDM.2000.C-8-2

[C-8-2] Design of SiGe/Buried Oxide Layered Structure to Form Highly Strained Si Layer on Insulator for SOI MOSFETs

N. Sugiyama、T. Mizuno、M. Suzuki、S. Takagi (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation、2.Environmental Engineering and Analysis Center, Corporate R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2000.C-8-2

2000 International Conference on Solid State Devices and Materials

[C-8-2] Design of SiGe/Buried Oxide Layered Structure to Form Highly Strained Si Layer on Insulator for SOI MOSFETs