[C-8-3] Optimization of Selective Epitaxy Process for Elevated Source/Drain Applicable to 0.15 μm Fully Depleted CMOS on 25 nm SOI

Toshiyuki Nakamura、Hideaki Matsuhashi、Yoshiaki Katakura、Jun Kanamori (1.VLSI Research Center, Oki Electric Industry, Co., Ltd.)

https://doi.org/10.7567/SSDM.2000.C-8-3