[D-2-7] Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories

A. KOHNO, H. MURAKAMI, M. IKEDA, H. NISHIYAMA, S. MIYAZAKI, M. HIROSE (1.Department of Electrical Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.2000.D-2-7