Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors

Hiroshi Okada; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.2000.D-3-5

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[D-3-5] Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors

Hiroshi Okada、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.2000.D-3-5

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