[E-5-4] A 3.26 μm2 Full CMOS SRAM Cell Using Non-Overlap Contacts for Super Low Power Applications

H. S. Ha、J. E. Song、H. S. Chang、K. H. Lee、S. G. Kim、K. J. Kim、K. T. Kim (1.SRAM Team, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2000.E-5-4