[A-6-1] Manufacturable 0.13 μm DRAM Technology for 512M DDR DRAM

Yong-Hae Kim、Dae-Young Kim、Jae-Beom Park、Seung-Ho Yi、Byung-Seop Hong、Dong-Gyu Yim、Jun-Ki Kim、Jong-Moo Choi、Dong-Duk Lee、Gyu-Han Yoon (1.TG-1/P1 Memory Research Development Division, Hynix Semiconductor)

https://doi.org/10.7567/SSDM.2001.A-6-1