[C-4-3] The Influence of the Device Miniaturization on the Ion Enhancement in the Intrinsic Silicon Body (i-body) SOI-MOSFET's
Risho Koh、Hisashi Takemura、Kiyoshi Takeuchi、Tohru Mogami
(1.Silicon Systems Research Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.2001.C-4-3