Fully Depleted SOI CMOS Device with Raised Source/Drain for 90nm Embedded SRAM Technology

Myoung-Hwan Oh; Chang-Hyun Park; Hee Sung Kang; Chang-Bong Oh; Young-Wug Kim; Kwang-Pyuk Suh

doi:https://doi.org/10.7567/SSDM.2003.B-10-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[B-10-3] Fully Depleted SOI CMOS Device with Raised Source/Drain for 90nm Embedded SRAM Technology

Myoung-Hwan Oh、Chang-Hyun Park、Hee Sung Kang、Chang-Bong Oh、Young-Wug Kim、Kwang-Pyuk Suh (1.Technology Development PT, System LSI Division, Semiconductor Business, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2003.B-10-3

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