ZnO Metal-Insulator-Semiconductor Field-Effect-Transistors

Junya Nishii; Akira Ohtomo; Tomoteru Fukumura; Keita Ohtani; Fumihiro Matsukura; Yuzo Ohno; Hideo Ohno; Masashi Kawasaki

doi:https://doi.org/10.7567/SSDM.2003.E-1-7

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[E-1-7] ZnO Metal-Insulator-Semiconductor Field-Effect-Transistors

Junya Nishii、Akira Ohtomo、Tomoteru Fukumura、Keita Ohtani、Fumihiro Matsukura、Yuzo Ohno、Hideo Ohno、Masashi Kawasaki (1.Tohoku Univ., Institute for Materials Research、2.Tohoku Univ., Research Institute of Electrical Communication)

https://doi.org/10.7567/SSDM.2003.E-1-7

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