Thickness Dependent Device Operation of Sublimed Molecular Field-Effect Transistors

S. Hoshino; M. Yoshida; S. Uemura; T. Kodzasa; T. Kamata; K. Yase

doi:https://doi.org/10.7567/SSDM.2003.P13-2

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P13-2] Thickness Dependent Device Operation of Sublimed Molecular Field-Effect Transistors

S. Hoshino、M. Yoshida、S. Uemura、T. Kodzasa、T. Kamata、K. Yase (1.Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2003.P13-2

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