[B-8-2] Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-base gate dielectrics

Hokyung Park、Byounghun Lee、Mark Gardner、Hyunsang Hwang (1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology、2.International SEMATECH、3.IBM Assignee、4.AMD assignee)

https://doi.org/10.7567/SSDM.2004.B-8-2