A Highly Scalable Split-Gate SONOS Flash Memory with Programmable-Pass and Pure-Select Transistors for Sub-90-nm Technology

Yong Kyu Lee; Byung Yong Choi; Jae Sung Sim; Ki Whan Song; Jong Duk Lee; Byung-Gook Park; Donggun Park; Chilhee Chung

doi:https://doi.org/10.7567/SSDM.2004.D-4-2

[D-4-2] A Highly Scalable Split-Gate SONOS Flash Memory with Programmable-Pass and Pure-Select Transistors for Sub-90-nm Technology

Yong Kyu Lee、Byung Yong Choi、Jae Sung Sim、Ki Whan Song、Jong Duk Lee、Byung-Gook Park、Donggun Park、Chilhee Chung (1.Inter-university Semiconductor Research Center and School of Electrical Engineering, Seoul National University、2.C&M, System LSI and、3.Device Research Team, R&D Center, Samsung Electronics Co.)

https://doi.org/10.7567/SSDM.2004.D-4-2

2004 International Conference on Solid State Devices and Materials

[D-4-2] A Highly Scalable Split-Gate SONOS Flash Memory with Programmable-Pass and Pure-Select Transistors for Sub-90-nm Technology